Liquid phase epitaxy of films with langasite structure

被引：4

作者：

Chani, VI

Takeda, H

Fukuda, T

机构：

[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 60卷 / 03期

关键词：

piezoelectric; langasite; film; liquid phase epitaxy; flux; segregation;

D O I：

10.1016/S0921-5107(99)00141-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial films of Na2CaGe6O14 with langasite structure were deposited by liquid phase epitaxy (LPE) technique on isomorphic Nd3Ga5SiO14 substrates at a growth temperature of about 1000 degrees C using K2O-V2O5 based flux. The films were about 100 mu m in thickness and had rough surface morphology. The film composition measurements were made by scanning electron-probe microanalysis (EPMA). EPMA data indicated low content of flux forming: K+ and V5+ cations in the films grown. Ca2+ enrichment and Na+ decrease were detected in the vicinity of film/substrate interfaces. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：212 / 216

页数：5

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