Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals

被引：49
作者：
Klein, A
Loher, T
Tomm, Y
Pettenkofer, C
Jaegermann, W
机构：
[1] Hahn-Meitner-Institut, Abteilung CG, 14109 Berlin
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 10期
关键词：
D O I：
10.1063/1.118517
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be Delta E(V)=0.6 (+/-0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the the CdS/CuInSe2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. (C) 1997 American Institute of Physics.
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页码：1299 / 1301
页数：3
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