Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals

被引：49

作者：

Klein, A

Loher, T

Tomm, Y

Pettenkofer, C

Jaegermann, W

机构：

[1] Hahn-Meitner-Institut, Abteilung CG, 14109 Berlin

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.118517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be Delta E(V)=0.6 (+/-0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the the CdS/CuInSe2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. (C) 1997 American Institute of Physics.

引用

页码：1299 / 1301

页数：3

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