Free-electron gas at charged domain walls in insulating BaTiO3

被引：398

作者：

Sluka, Tomas ^{[1
]}

Tagantsev, Alexander K. ^{[1
]}

Bednyakov, Petr ^{[1
]}

Setter, Nava ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

NATURE COMMUNICATIONS | 2013年 / 4卷

基金：

欧洲研究理事会;

关键词：

INTERFACE; CONDUCTANCE;

D O I：

10.1038/ncomms2839

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domain walls are expected. Unlike hetero interfaces, domain walls can be created, displaced, annihilated and recreated inside a functioning device. Theory predicts the existence of 'strongly' charged domain walls that break polarization continuity, but are stable and conduct steadily through a quasi-two-dimensional electron gas. Here we show this phenomenon experimentally in charged domain walls of the prototypical ferroelectric BaTiO3. Their steady metallic-type conductivity, 10(9) times that of the parent matrix, evidence the presence of stable degenerate electron gas, thus adding mobility to functional interfaces.

引用

页数：6

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