Reactive Sputtering Process for CuIn1-xGaxSe2 Thin Film Solar Cells

被引：14

作者：

Park, Nae-Man ^{[1
]}

Lee, Ho Sub ^{[1
]}

Kim, Jeha ^{[1
]}

机构：

[1] ETRI, Convergence Components & Mat Res Lab, Taejon, South Korea

来源：

ETRI JOURNAL | 2012年 / 34卷 / 05期

关键词：

Cu(In; Ga)Se-2; (CIGS); solar cell; chalcopyrite; submicron thin film; reactive sputtering; CU;

D O I：

10.4218/etrij.12.0212.0062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CuIn1-xGaxSe2 (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and (In0.7Ga0.3)(2)Se-3 targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

引用

页码：779 / 782

页数：4

共 16 条

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