AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

被引：9
|
作者：
Rennesson, S. [1 ,2 ]
Damilano, B. [1 ]
Vennegues, P. [1 ]
Chenot, S. [1 ]
Cordier, Y. [1 ]
机构：
[1] CNRS, CRHEA, F-06560 Valbonne, France
[2] Univ Nice Sophia Antipolis, Dept Phys, F-06103 Nice, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 03期
关键词：
AlGaN; GaN HEMT; InGaN back-barrier; NH3-MBE; silicon substrate; ALGAN/GAN/INGAN/GAN DH-HEMTS; OUTPUT POWER-DENSITY; QUANTUM-WELLS; SI SUBSTRATE; GHZ; MBE; TRANSISTORS; SI(111);
D O I：
10.1002/pssa.201200572
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the study of AlGaN/GaN high electron mobility transistors (HEMTs) incorporating an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy (NH3-MBE). The structural characterizations confirm the good crystalline quality of the heterostructure and the pseudomorphic growth of InGaN. This is also verified by the Hall effect mobility of about 2130cm2V1s1. The associated two-dimensional electron gas carrier concentration is in the range of 8x1012cm2 for heterostructures grown on GaN:Fe-on-sapphire templates. Normal DC transistor operation is observed. Similar results have been obtained on silicon substrates. To our knowledge, this is the first demonstration of AlGaN/GaN HEMTs with an InGaN back-barrier grown by NH3-MBE.
引用
收藏
页码：480 / 483
页数：4
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