Theoretical studies of the band structure and optoelectronic properties of ZnOxS1x

被引:25
作者
Khan, Imad [1 ]
Ahmad, Iftikhar [1 ]
机构
[1] Univ Malakand Chakdara, Dept Phys, Dir L, Pakistan
关键词
optoelectronics; band gap engineering; band gap bowing; mBJ; dielectrics; DOPED ZNO NANOWIRES; OPTICAL-PROPERTIES; ELECTRONIC-STRUCTURE; ZNO1-XSX;
D O I
10.1002/qua.24277
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the present article, we have revisited the electronic band gap nature of ZnOxS1x (0 x 1) with the recently developed modified Becke and Johnson exchange potential and the calculated band gaps are found consistent with the experimental results. We expect that the band gap bowing parameter obtained in the present work will be close to the experimental one. As the optical properties of ZnOxS1x (0 x 1) are very important, therefore different optical parameters like dielectric functions, refractive index and reflectivity are also calculated. The results are illustrated in terms of band structures, band gap energy as a function of oxygen composition, total and partial density of states. (c) 2012 Wiley Periodicals, Inc.
引用
收藏
页码:1285 / 1292
页数:8
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