Thermally Induced Deformation Measurement of Through-Silicon Via (TSV) Structures using an Atomic Force Microscope (AFM) Moire Method

3D-IC integration realized by using through-silicon via (TSV) technology is the key trend of electronic device and packaging industry. In this paper, atomic force microscope (AFM) moire method with pseudo-phase-shifting technique was adapted for the thermally induced deformation measurement of TSV structure to assess its reliability. To enhance the sensitivity of AFM moire method suitable for sub-micro-scale deformations of TSV structure, the fine pitch and zero thickness grating fabricated by using focused ion beam (FIB) milling was used as the specimen grating. At an elevated temperature, the deformations of TSV structure was measured and analyzed. From the experimental result, global deformations induced by the coefficients of thermal expansion (CTEs) mismatch between the chip and the ceramic substrate were dominant than the local deformations under the elevated temperature.