Bending effects of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate

被引：32

作者：

Chen, Tse-Pu ^{[2
,3
]}

Young, Sheng-Joue ^{[1
]}

Chang, Shoou-Jinn ^{[2
,3
]}

Hsiao, Chih-Hung ^{[2
,3
]}

Hsu, Yu-Jung ^{[4
]}

机构：

[1] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

ZnO; Nanorod; MSM; Photodetector; Flexible; LIGHT-EMITTING-DIODES; ENHANCEMENT; STRAIN;

D O I：

10.1186/1556-276X-7-214

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors report the fabrication and I-V characteristics of ZnO nanorod metal-semiconductor-metal photodetectors on flexible polyimide substrate. From field-emission scanning electron microscopy and X-ray diffraction spectrum, ZnO nanorods had a (0002) crystal orientation and a wurtzite hexagonal structure. During the I-V and response measurement, the flexible substrates were measured with (i.e., the radius of curvatures was 0.2 cm) and without bending. From I-V results, the dark current decreased, and the UV-to-visible rejection ratio increased slightly in bending situation. The decreasing tendency of the dark current under bending condition may be attributed to the increase of the Schottky barrier height.

引用

页数：6

共 36 条

[1] Nanostructured n-ZnO/thin film p-silicon heterojunction light-emitting diodes [J].