High-depth-resolution Auger depth profiling atomic mixing

被引:21
|
作者
Menyhard, M [1 ]
机构
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
基金
匈牙利科学研究基金会;
关键词
Auger depth profiling; ion-induced damage; TRIM simulation; atomic mixing;
D O I
10.1016/S0968-4328(99)00010-4
中图分类号
TH742 [显微镜];
学科分类号
摘要
The ion-bombardment-induced defects and their effect on the capability of Auger depth profiling is reviewed and discussed. It is shown that by using low ion energy ( < 1 keV) and grazing angle of incidence ( > 80 degrees), the quasi-quantitative detection of layers with thickness of I nm can be acheived. We discuss the possible evaluation routines for Auger depth profiling. In a case study, we demonstrate the performance of a novel evaluation routine based on TRIM simulation. We show by the help of the case study that, by depth profiling specimen of known structure, we can deduce data concerning atomic mixing. The close connection between Auger depth profiling and ion milling is also discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:255 / 265
页数:11
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