CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

被引：50

作者：

Singh, Bharti ^{[1
]}

Mehta, B. R. ^{[1
]}

Varandani, Deepak ^{[1
]}

Savu, Andreea Veronica ^{[2
]}

Brugger, Juergen ^{[2
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India

[2] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 49期

基金：

瑞士国家科学基金会;

关键词：

TRANSITION; FILMS; MODEL;

D O I：

10.1088/0957-4484/23/49/495707

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

With the objective of understanding the role of size and current level of filamentary regions on the resistive switching parameters, detailed conductive atomic force microscope investigations of resistive memory cells having different dimensions have been carried out in this study. Cu-Cu2O-Ti memory cells having dimensions of 150, 50 and 25 mu m have been fabricated on the same substrate using a stencil lithography technique. The dependence of resistive switching parameters on the device dimensions can be directly related to the average size, current level of the filaments and difference in these parameters between the low resistance state (LRS) and high resistance state (HRS). It is observed that the large increase in the ratio of current in the two states in cells having lower dimensions is mainly due to the smaller number of conducting regions in the HRS, indicating efficient switching from the LRS to the HRS at lower dimensions.

引用

页数：10

共 26 条

[1] Write current reduction in transition metal oxide based resistance-change memory [J].

Ahn, Seung-Eon ;

Lee, Myoung-Jae ;

Park, Youngsoo ;

Kang, Bo Soo ;

Lee, Chang Bum ;

Kim, Ki Hwan ;

Seo, Sunae ;

Suh, Dong-Seok ;

Kim, Dong-Chirl ;

Hur, Jihyun ;

Xianyu, Wenxu ;

Stefanovich, Genrikh ;

Yin, Hit. Axiang ;

Yoo, In-Kyeong ;

Lee, Atng-Hyun ;

Park, Jong-Bong ;

Baek, In-Gyu ;

Park, Bae Ho .

ADVANCED MATERIALS, 2008, 20 (05) :924-+

[2] Surface-modified CuO layer in size-stabilized single-phase Cu2O nanoparticles [J].

Balamurugan, B ;

Mehta, BR ;

Shivaprasad, SM .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3176-3178

[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[4] MODEL FOR RESISTIVE-CONDUCTIVE TRANSITION IN REVERSIBLE RESISTANCE-SWITCHING SOLIDS [J].

COOK, EL .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :551-&

[5]

Da-Shan S., 2011, NANOTECHNOLOGY, V22

[6] Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy [J].

Deleruyelle, Damien ;

Dumas, Carine ;

Carmona, Marion ;

Muller, Christophe ;

Spiga, Sabina ;

Fanciulli, Marco .

APPLIED PHYSICS EXPRESS, 2011, 4 (05)

[7] Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory [J].

Janousch, Markus ;

Meijer, G. Ingmar ;

Staub, Urs ;

Delley, Bernard ;

Karg, Siegfried F. ;

Andreasson, Bjorn P. .

ADVANCED MATERIALS, 2007, 19 (17) :2232-+

[8]

Jeong DS, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1968416, 10.1063/1.1865326]

[9] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[10] Effects of metal electrodes on the resistive memory switching property of NiO thin films [J].

Lee, C. B. ;

Kang, B. S. ;

Benayad, A. ;

Lee, M. J. ;

Ahn, S. -E. ;

Kim, K. H. ;

Stefanovich, G. ;

Park, Y. ;

Yoo, I. K. .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

← 1 2 3 →