Electrical and optical properties of nanocrystalline yttrium-doped hafnium oxide thin films

被引：21
|
作者：
Noor-A-Alam, M. [1 ]
Abhilash, K. [1 ]
Ramana, C. V. [1 ]
机构：
[1] Univ Texas El Paso, Dept Mech Engn, El Paso, TX 79968 USA
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 21期
关键词：
Y-doped hafnia; Thin films; Structure; Electrical conductivity; Band gap; SPECTROSCOPIC ELLIPSOMETRY; PHASE-TRANSFORMATION; HFO2; REFLECTIVITY; DIELECTRICS;
D O I：
10.1016/j.tsf.2012.06.080
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Yttrium-doped hafnium oxide (YDH) films have been produced by sputter-deposition by varying the growth temperature (T-s) from room-temperature (RT) to 400 degrees C. The electrical and optical properties of YDH films have been investigated. Structural studies indicate that YDH films grown at T-s = RT-200 degrees C were amorphous and those grown at 300-400 degrees C are nanocrystalline. The crystalline YDH films exhibit the high temperature cubic phase of HfO2. Spectrophotometry analysis indicates that all the YDH films are transparent. The band gap of YDH films was found to be in the range of 6.20-6.28 eV. Frequency variation of frequency dependent resistivity indicates the hopping conduction mechanism operative in YDH films. While the electrical resistivity (rho(ac)) is similar to 1 Omega-m at low frequencies (100 Hz), rho(ac) decreases to similar to 10(-4) Omega-cm at higher frequencies (1 MHz). (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：6631 / 6635
页数：5
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