Thermoelectric properties of Bi0.5Sb1.5Te3/C60 nanocomposites

被引：62

作者：

Blank, V. D. ^{[1
]}

Buga, S. G. ^{[1
]}

Kulbachinskii, V. A. ^{[2
]}

Kytin, V. G. ^{[2
]}

Medvedev, V. V. ^{[1
]}

Popov, M. Yu. ^{[1
]}

Stepanov, P. B. ^{[1
]}

Skok, V. F. ^{[1
]}

机构：

[1] Technol Inst Superhard & Novel Carbon Mat, Troitsk 142190, Moscow Region, Russia

[2] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Moscow 119991, Russia

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 07期

关键词：

N-TYPE BI2TE3; VALENCE-BAND; GALVANOMAGNETIC PROPERTIES; ELECTRONIC-STRUCTURE; TRANSPORT; SB2-XTIXTE3; CRYSTALS; DEVICES; MERIT; TI;

D O I：

10.1103/PhysRevB.86.075426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thermoelectric nanocomposite of Bi0.5Sb1.5Te3 with the C-60 fullerene molecules has been synthesized and studied. The fullerene molecules provide the phonons blocking, reducing the lattice thermal conductivity. The reduction of the electrical conductivity is much less than the heat conductivity reduction at a low fullerene content. Therefore, the thermoelectric figure of merit increases up to 25% at 305 K. The thermoelectric properties of the synthesized materials have been analyzed theoretically in the frame of the Boltzmann equation approach. The calculations predict the optimal carrier concentration and C-60 content for a maximal value of the thermoelectric figure of merit in a wide temperature range.

引用

页数：8

共 34 条

[1]

Abrikosov N.K., 1969, SEMICONDUCTING 2 6 4, V1st

[2]

ASKEROV BM, 1985, ELECT TRANSPORT PHEN, P320

[3] Syntheses and thermoelectric properties of Bi2Te3/Sb2Te3 bulk nanocomposites with laminated nanostructure [J].

Cao, Y. Q. ;

Zhao, X. B. ;

Zhu, T. J. ;

Zhang, X. B. ;

Tu, J. P. .

APPLIED PHYSICS LETTERS, 2008, 92 (14)

[4] Anistropy of the constant-energy surfaces in n-type Bi2Te3 and Bi2Se3 from galvanomagnetic coefficients [J].

Caywood, L. P., Jr. ;

Miller, G. R. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3209-3220

[5] Micro-thermoelectric cooler: interfacial effects on thermal and electrical transport [J].

da Silva, LW ;

Kaviany, M .

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2004, 47 (10-11) :2417-2435

[6]

DRABBLE J, 1963, PROGR SEMICONDUCTORS, V7

[7] METHOD FOR THE SIMULTANEOUS DETERMINATION OF ANISOTROPIC RESIDUAL-STRESSES AND TEXTURE BY X-RAY-DIFFRACTION [J].

FERRARI, M ;

LUTTEROTTI, L .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) :7246-7255

[8] Quantum dot superlattice thermoelectric materials and devices [J].

Harman, TC ;

Taylor, PJ ;

Walsh, MP ;

LaForge, BE .

SCIENCE, 2002, 297 (5590) :2229-2232

[9] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].

HERRING, C ;

VOGT, E .

PHYSICAL REVIEW, 1956, 101 (03) :944-961

[10] THERMOELECTRIC FIGURE OF MERIT OF A ONE-DIMENSIONAL CONDUCTOR [J].

HICKS, LD ;

DRESSELHAUS, MS .

PHYSICAL REVIEW B, 1993, 47 (24) :16631-16634

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