Field Emission and Cathodoluminescence of ZnS Hexagonal Pyramids of Zinc Blende Structured Single Crystals

被引:44
作者
Chen, Zhi-Gong [1 ,2 ,3 ]
Zou, Jin [4 ,5 ]
Wang, Dai-Wei [1 ]
Yin, Li-Chang [1 ]
Liu, Gong [1 ]
Liu, Qingfeng [1 ]
Sun, Cheng-Hua [2 ,3 ]
Yao, Xiongdong [2 ,3 ]
Li, Feng [1 ]
Yuan, Xiao-Li [6 ]
Sekiguchi, Takashi [6 ]
Lu, Goo Qing [2 ,3 ]
Cheng, Hui-Ming [1 ]
机构
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[2] Univ Queensland, Sch Engn, ARC Ctr Excellence Funct Nanomat, Brisbane, Qld 4072, Australia
[3] Univ Queensland, AIBN, Brisbane, Qld 4072, Australia
[4] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia
[5] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
[6] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
基金
澳大利亚研究理事会;
关键词
ASSISTED SYNTHESIS; OPTICAL-PROPERTIES; NANORIBBON ARRAYS; NANOWIRE ARRAYS; WURTZITE ZNS; CONE ARRAYS; GROWTH; NANOSTRUCTURES; FABRICATION; NANOBELTS;
D O I
10.1002/adfm.200801178
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single-crystal hexagonal pyramids of zinc: blende ZnS are fabricated by facile thermal evaporation in an ammonia atmosphere at 1150 degrees C. It is found that ZnS pyramids grow along the [111] crystal axis and possess a sharp tip with a diameter of similar to 10 nm and a micrometer-sized base. The structural model and growth mechanism are proposed based on crystallographic characteristics. This unique ZnS pyramid structure exhibits a low turn-on field (2.81 V mu m(-1)), a high field-enhancement factor (over 3000), a large field-emission current density (20 mA cm(-2)), and good stability with very small fluctuation (0.9%). These superior field-emission properties are clearly attributed to the pyramid morphology, with micrometer-sized bases and nanotips, and high crystallinity. Moreover, a stable UV emission of 337 nm at room temperature is observed and can be ascribed to the band emission of the zinc blende phase. These results suggest that the ZnS hexagonal pyramids can be expected to find promoting applications as field emitters and optoelectronic devices.
引用
收藏
页码:484 / 490
页数:7
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