Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum -: art. no. 113316

被引：10

作者：

Nauen, A ^{[1
]}

Hohls, F ^{[1
]}

Könemann, J ^{[1
]}

Haug, RJ ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.69.113316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the noise properties of a GaAs/AlxGa1-xAs resonant-tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observe super-Poissonian shot noise up to values of the Fano factor alphaapproximate to10.

引用

页数：4

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