Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges

被引:235
作者
Gao, Yabo [1 ]
Zhang, Yanfeng [1 ,2 ]
Chen, Pengcheng [3 ]
Li, Yuanchang [4 ,5 ]
Liu, Mengxi [1 ]
Gao, Teng [1 ]
Ma, Donglin [1 ]
Chen, Yubin [1 ]
Cheng, Zhihai [3 ]
Qju, Xiaohui [3 ]
Duan, Wenhui [4 ,5 ,6 ]
Liu, Zhongfan [1 ]
机构
[1] Peking Univ, Ctr Nanochem CNC, Beijing Natl Lab Mol Sci, Coll Chem & Mol Engn,Acad Adv Interdisciplinary S, Beijing 100871, Peoples R China
[2] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
[3] Chinese Acad Sci, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
[4] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[5] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[6] Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
graphene; boron nitride; BNC hybrid; interface; STM; HETEROSTRUCTURES; NANOMESH; BANDGAP;
D O I
10.1021/nl4021123
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The atomic layer of hybridized, hexagonal boron nitride (h-BN) and graphene has attracted a great deal of attention after the pioneering work of P. M. Ajayan et al. on Cu foils because of their unusual electronic properties (Ci, L. J.; et al. Nat. Mater. 2010, 9, 430-435). However, many fundamental issues are still not clear, including the in-plane atomic continuity as well as the edge type at the boundary of hybridized h-BN and graphene domains. To clarify these issues, we have successfully grown a perfect single-layer h-BN-graphene (BNC) patchwork on a selected Rh(111) substrate, via a two-step patching growth approach. With the ideal sample, we convinced that at the in-plane linking interface, graphene and h-BN can be linked perfectly at an atomic scale. More importantly, we found that zigzag linking edges were preferably formed, as demonstrated by atomic-scale scanning tunneling microscopy images, Which was also theoretically verified using density functional theory calculations. We believe the experimental and theoretical works are of particular importance to obtain a fundamental understanding of the BNC hybrid and to establish a deliberate structural, control targeting high-performance electronic and spintronic devices.
引用
收藏
页码:3439 / 3443
页数:5
相关论文
共 34 条
  • [11] Minimum thermal conductance in graphene and boron nitride superlattice
    Jiang, Jin-Wu
    Wang, Jian-Sheng
    Wang, Bing-Shen
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (04)
  • [12] Narrow graphene nanoribbons from carbon nanotubes
    Jiao, Liying
    Zhang, Li
    Wang, Xinran
    Diankov, Georgi
    Dai, Hongjie
    [J]. NATURE, 2009, 458 (7240) : 877 - 880
  • [13] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
    Kresse, G
    Furthmuller, J
    [J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11169 - 11186
  • [14] Unraveling the structure of the h-BN/Rh(111) nanomesh with ab initio calculations
    Laskowski, R.
    Blaha, P.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (06)
  • [15] Single-layer model of the hexagonal boron nitride nanomesh on the rh(111) surface
    Laskowski, Robert
    Blaha, Peter
    Gallauner, Thomas
    Schwarz, Karlheinz
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (10)
  • [16] Graphene and boron nitride lateral heterostructures for atomically thin circuitry
    Levendorf, Mark P.
    Kim, Cheol-Joo
    Brown, Lola
    Huang, Pinshane Y.
    Havener, Robin W.
    Muller, David A.
    Park, Jiwoong
    [J]. NATURE, 2012, 488 (7413) : 627 - 632
  • [17] BN White Graphene with "Colorful" Edges: The Energies and Morphology
    Liu, Yuanyue
    Bhowmick, Somnath
    Yakobson, Boris I.
    [J]. NANO LETTERS, 2011, 11 (08) : 3113 - 3116
  • [18] Liu Z, 2013, NAT NANOTECHNOL, V8, P119, DOI [10.1038/nnano.2012.256, 10.1038/NNANO.2012.256]
  • [19] Disorder and Segregation in B-C-N Graphene-Type Layers and Nanotubes: Tuning the Band Gap
    Martins, Jonathan da Rocha
    Chacham, Helio
    [J]. ACS NANO, 2011, 5 (01) : 385 - 393
  • [20] Current saturation in zero-bandgap, topgated graphene field-effect transistors
    Meric, Inanc
    Han, Melinda Y.
    Young, Andrea F.
    Ozyilmaz, Barbaros
    Kim, Philip
    Shepard, Kenneth L.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (11) : 654 - 659