Charge-mixer based on MOS interface-trap charge pump

被引：1

作者：

Massari, N ^{[1
]}

Gottardi, M ^{[1
]}

机构：

[1] ITC Irst, Microsyst Div, I-38050 Trento, Italy

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 03期

关键词：

Charge carriers - Charge transfer - Light modulation - MOS devices - Signal processing;

D O I：

10.1049/el:20064196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3.3 V charge-mixer device ill a 0.35 mu m CMOS process detects the intensity and phase of a modulated signal. A two PMOS pair is Used as charge-mixer to exploit the interface-trap charge PUMP phenomenon. Using clocking between accumulation and inversion, the two transistors perform a voltage-to-charge conversion of the input signal and transfer this charge to file two outputs synchronously to the applied signal.

引用

页码：151 / 152

页数：2