Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates

被引：0
|
作者：
Huang, YL [1 ]
Ma, L [1 ]
Yang, FH [1 ]
Wang, LC [1 ]
Zeng, YP [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A1GaAs/1nGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current-voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temperature, the peak-valley, current ratio and the peak voltage are about 4.8 and 0.44 V, respectivcly The HEMT is characterized by a, gate length of 1 mu m, a, maximum transconductance of 125 mS/mm, and a threshold voltage of -1.0 V. The current-voltage, characteristics of the series-connected RTDs are presented. Tire current-voltage curves of the parallel connection of one RTD and one HEMT are also presented.
引用
收藏
页码：697 / 700
页数：4
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