Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates

被引：0
|
作者：
Huang, YL [1 ]
Ma, L [1 ]
Yang, FH [1 ]
Wang, LC [1 ]
Zeng, YP [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A1GaAs/1nGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current-voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temperature, the peak-valley, current ratio and the peak voltage are about 4.8 and 0.44 V, respectivcly The HEMT is characterized by a, gate length of 1 mu m, a, maximum transconductance of 125 mS/mm, and a threshold voltage of -1.0 V. The current-voltage, characteristics of the series-connected RTDs are presented. Tire current-voltage curves of the parallel connection of one RTD and one HEMT are also presented.
引用
收藏
页码：697 / 700
页数：4
相关论文
共 50 条
  • [21] Monolithic integration of resonant tunneling diodes, schottky barrier diodes and 0.1-μm-gate high electron mobility transistors for high-speed ICs
    Matsuzaki, H
    Osaka, J
    Itoh, T
    Sano, K
    Murata, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4A): : 2186 - 2190
  • [22] Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors
    Bhardwaj, Shubhendu
    Sensale-Rodriguez, Berardi
    Xing, Huili Grace
    Rajan, Siddharth
    Volakis, John L.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (01)
  • [23] Resonant tunnelling hot electron transistors: Present status and future prospects
    Yokoyama, N
    Imamura, K
    Takatsu, M
    Mori, T
    Adachihara, T
    Sugiyama, Y
    Sakuma, Y
    Tackeuchi, A
    Muto, S
    PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1996, 354 (1717): : 2399 - 2411
  • [24] Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates
    Kim, Byung-Jae
    Kim, Hong-Yeol
    Kim, Jihyun
    Jang, Soohwan
    JOURNAL OF CRYSTAL GROWTH, 2011, 326 (01) : 205 - 207
  • [25] Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors
    Lamari, N
    Mfitih, M
    Nassif, N
    COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2002, 21 (02) : 173 - 192
  • [26] ELECTRICAL-PROPERTIES OF GAAS/INGAAS HIGH ELECTRON-MOBILITY TRANSISTORS
    RAMAN, VK
    CHANG, J
    VISWANATHAN, CR
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1990, 69 (05) : 621 - 629
  • [27] MULTIPLE-CHANNEL GAAS ALGAAS HIGH ELECTRON-MOBILITY TRANSISTORS
    SHENG, NH
    LEE, CP
    CHEN, RT
    MILLER, DL
    LEE, SJ
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) : 307 - 310
  • [28] Unconditionally stable high current density resonant tunnelling diodes
    Dupuis, O
    Pesant, JC
    Mounaix, P
    Mollot, F
    Vanbésien, O
    Lippens, D
    TERAHERTZ SPECTROSCOPY AND APPLICATIONS 11, 1999, 3828 : 326 - 334
  • [29] Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates
    Aigo, T
    Goto, M
    Ohta, Y
    Jono, A
    Tachikawa, A
    Moritani, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (04) : 527 - 534
  • [30] Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on si substrates
    Nippon Steel Corp, Kanagawa, Japan
    IEEE Trans Electron Devices, 4 (527-534):
12345