Thin film LaYbO3 capacitive structures grown by pulsed laser deposition

被引：3

作者：

Vasta, Giuseppe ^{[1
]}

Feteira, Antonio ^{[2
]}

Woodward, David I. ^{[3
]}

Walker, David ^{[3
]}

Thomas, Pam A. ^{[3
]}

Jackson, Timothy J. ^{[1
]}

机构：

[1] Univ Birmingham, Sch Elect Elect & Comp Engn, Birmingham B15 2TT, W Midlands, England

[2] Univ Birmingham, Sch Chem, Birmingham B15 2TT, W Midlands, England

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

THIN SOLID FILMS | 2013年 / 527卷

关键词：

Lanthanide ytterbium oxide; Thin films; Dielectric properties; Crystal structure; Pulsed laser deposition; DIELECTRIC-PROPERTIES; CRYSTAL-STRUCTURE; MBE;

D O I：

10.1016/j.tsf.2012.12.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The crystal structure and the dielectric properties of LaYbO3 films grown by pulsed laser deposition and integrated in SrRuO3/LaYbO3/SrRuO3 capacitive structures are reported. Two different fabrication procedures are assessed. When the SrRuO3/LaYbO3/SrRuO3 stack is grown in-situ, the relative permittivity of the LaYbO3 is 35. When instead the lower SrRuO3 electrode layer is patterned by contact photolithography and argon ion milling, prior to the deposition of the LaYbO3, the relative permittivity of the LaYbO3 is 55. In this case, post-growth annealing brings the relative permittivity towards that of the film grown in-situ. In both cases the relative permittivity is higher than the value measured in bulk material. This is attributed to the permittivity being highest along the orthorhombic c-axis. The annealing procedure produced a recrystallization of the LaYbO3 and of the SrRuO3. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：81 / 86

页数：6

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