Investigation of microstructure and chemical composition of Ni contacts to n-type 4H-SiC

被引：14

作者：

Rogowski, Jacek ^{[1
]}

Kubiak, Andrzej ^{[2
]}

机构：

[1] Tech Univ Lodz, Inst Gen & Ecol Chem, PL-90924 Lodz, Poland

[2] Tech Univ Lodz, Dept Semicond & Optoelect Devices, PL-90924 Lodz, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 15期

关键词：

Silicon carbide; Ohmic contact; TOF-SIMS; OHMIC CONTACTS; NICKEL SILICIDE; FILM;

D O I：

10.1016/j.mseb.2012.01.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structure and chemical compositions of the interface layer obtained after nickel deposition on silicon carbide surface and subsequent annealing have been analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray diffraction (XRD) and Raman spectroscopy. Nickel silicide (Ni2Si) were characterized as the main product of reaction between nickel and silicon carbide after annealing at temperatures range 700-1000 degrees C. Raman spectroscopy and TOF-SIMS profiling results confirmed carbon precipitation within contact layer. Obtained results indicate graphitic form of carbon and its non-uniform distribution in the contact layer. Moreover, TOF-SIMS analysis showed modification of nitrogen distribution in the contact area upon Ni/SiC contact annealing. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1318 / 1322

页数：5

共 50 条

[21] Raman analysis of defects in n-type 4H-SiC
杨银堂
韩茹
王平
Chinese Physics B, 2008, (09) : 3459 - 3463
[22] Raman analysis of defects in n-type 4H-SiC
School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
不详
Chin. Phys., 2008, 9 (3459-3463): : 3459 - 3463
[23] Ni/W/Ni ohmic contacts for both n- and p-type 4H-SiC
Bae, Dongwoo
Ahn, Gilcho
Jeong, Chungbu
Kim, Kwangsoo
ELECTRICAL ENGINEERING, 2018, 100 (04) : 2431 - 2437
[24] Ni/W/Ni ohmic contacts for both n- and p-type 4H-SiC
Dongwoo Bae
Gilcho Ahn
Chungbu Jeong
Kwangsoo Kim
Electrical Engineering, 2018, 100 : 2431 - 2437
[25] Long-term stability of Ni-silicide ohmic contact to n-type 4H-SiC
Kuchuk, A. V.
Guziewicz, M.
Ratajczak, R.
Wzorek, M.
Kladko, V. P.
Piotrowska, A.
MICROELECTRONIC ENGINEERING, 2008, 85 (10) : 2142 - 2145
[26] Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system
Tsukimoto, S
Sakai, T
Onishi, T
Ito, K
Murakami, M
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (10) : 1310 - 1312
[27] Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system
S. Tsukimoto
T. Sakai
T. Onishi
Kazuhiro Ito
Masanori Murakami
Journal of Electronic Materials, 2005, 34 : 1310 - 1312
[28] Investigation on Piezoresistive Effect of n-Type 4H-SiC Based on All-SiC Pressure Sensors
Tian, Baohua
Shang, Haiping
Wang, Dahai
Liu, Yang
Wang, Weibing
IEEE SENSORS JOURNAL, 2022, 22 (07) : 6435 - 6441
[29] Doping Dependence of Thermal Oxidation on n-Type 4H-SiC
Daas, B. K.
Islam, M. M.
Chowdhury, Iftekhar A.
Zhao, Feng
Sudarshan, T. S.
Chandrashekhar, M. V. S.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 115 - 121
[30] Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n-type 4H-SiC
Ramesha, C. K.
Reddy, V. Rajagopal
SUPERLATTICES AND MICROSTRUCTURES, 2014, 76 : 55 - 65

← 1 2 3 4 5 →