Investigation of microstructure and chemical composition of Ni contacts to n-type 4H-SiC

被引：14

作者：

Rogowski, Jacek ^{[1
]}

Kubiak, Andrzej ^{[2
]}

机构：

[1] Tech Univ Lodz, Inst Gen & Ecol Chem, PL-90924 Lodz, Poland

[2] Tech Univ Lodz, Dept Semicond & Optoelect Devices, PL-90924 Lodz, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 15期

关键词：

Silicon carbide; Ohmic contact; TOF-SIMS; OHMIC CONTACTS; NICKEL SILICIDE; FILM;

D O I：

10.1016/j.mseb.2012.01.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structure and chemical compositions of the interface layer obtained after nickel deposition on silicon carbide surface and subsequent annealing have been analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray diffraction (XRD) and Raman spectroscopy. Nickel silicide (Ni2Si) were characterized as the main product of reaction between nickel and silicon carbide after annealing at temperatures range 700-1000 degrees C. Raman spectroscopy and TOF-SIMS profiling results confirmed carbon precipitation within contact layer. Obtained results indicate graphitic form of carbon and its non-uniform distribution in the contact layer. Moreover, TOF-SIMS analysis showed modification of nitrogen distribution in the contact area upon Ni/SiC contact annealing. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1318 / 1322

页数：5

共 25 条

[1] Nickel film on (001) SiC: Thermally induced reactions [J].

Bachli, A ;

Nicolet, MA ;

Baud, L ;

Jaussaud, C ;

Madar, R .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (01) :11-23

[2]

Baechli A., 1998, MAT SCI ENG B, V56, P11

[3] Origin of ohmic behavior in Ni, Ni2Si and Pd contacts on n-type SiC [J].

Barda, Bohumil ;

Machac, Petr ;

Cichon, Stanislav ;

Machovic, Vladimir ;

Kudrnova, Marie ;

Michalcova, Alena ;

Siegel, Jakub .

APPLIED SURFACE SCIENCE, 2010, 257 (02) :414-422

[4] CHEMICAL-ANALYSIS OF INORGANIC AND ORGANIC-SURFACES AND THIN-FILMS BY STATIC TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY (TOF-SIMS) [J].

BENNINGHOVEN, A .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION IN ENGLISH, 1994, 33 (10) :1023-1043

[5] Study of reaction process on Ni/4H-SiC contact [J].

Cao, Y. ;

Nyborg, L. ;

Yi, D. -Q. ;

Jelvestam, U. .

MATERIALS SCIENCE AND TECHNOLOGY, 2006, 22 (10) :1227-1234

[6]

Choyke WJ, 2004, ADV TEXTS PHYS, P413

[7]

Feng Z.C., 2004, Silicon carbide: materials, processing, and devices

[8] Interpretation of Raman spectra of disordered and amorphous carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107

[9]

Han SY, 2001, APPL PHYS LETT, V79, P1816, DOI 10.1063/1.1404998

[10] Chemical analysis of interface area in DLC/Si systems [J].

Knapik, M. ;

Staryga, E. ;

Rogowski, J. ;

Fabisiak, K. ;

Jarzynska, D. ;

Rylski, A. ;

Clapa, M. .

OPTICAL MATERIALS, 2008, 30 (05) :767-769

← 1 2 3 →