Combined effects of temperature, hydrostatic pressure, and aluminum concentration on the magneto-optical properties of GaAs/AlμGa1-μAs quantum wells when phonons are confined

The combined influence of temperature, hydrostatic pressure, and applied aluminum concentration on the magneto-optical properties of GaAs/Al mu Ga1-mu,As quantum wells (QWs) is presented by considering the combined influences of them on the magnetophonon resonance absorption power (AP) and the full width at half maximum (FWHM) of the optically detected magneto phonon resonance (ODMPR) peaks for both phonon absorption and emission processes when phonons are confined to describe by Huang and Zhu. The numerical results denote that the AP and the FWHM have great influence (strong dependence) on the applied aluminum concentration, the temperature, and hydrostatic pressure. Moreover, the results also indicate the value and variation of the FWHM with applied aluminum concentration, hydrostatic pressure, as well as temperature of the ODMPR peak for phonon absorption processes is always larger and faster in comparison with that phonon emission process for both the confined and bulk phonons. Especially, when the phonons are confined, the more pronounced these properties are.