Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation

被引：29
作者：
Fitz, C
Kolitsch, A
Möller, W
Fukarek, W
机构：
[1] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Leybold Opt, D-01109 Dresden, Germany
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期
关键词：
D O I：
10.1063/1.1430268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. (C) 2002 American Institute of Physics.
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收藏
页码：55 / 57
页数：3
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