Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

被引：37
|
作者：
Mondal, Saikat [1 ]
Cho, Sang-Bock [2 ]
Kim, Bruce C. [1 ]
机构：
[1] CUNY, New York, NY 10031 USA
[2] Univ Ulsan, Dept Elect Engn, Ulsan 44610, South Korea
来源：
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2017年 / 25卷 / 01期
关键词：
3-D full wave simulation; 3-D inductor; crosstalk; through-silicon-via (TSV) shielding; SPIRAL INDUCTORS; RF;
D O I：
10.1109/TVLSI.2016.2568755
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, we present a novel through-siliconvia (TSV)-based 3-D inductor structure with ground TSV shielding for better noise performance. In addition, a circuit model is proposed for the inductor, which can reduce the simulation time over finite-element-based 3-D full-wave simulation. Rigorous 3-D full-wave simulation is performed up to 10 GHz to validate the circuit model. The ground TSV-based 3-D inductor is found to be resilient to TSV-TSV crosstalk noise compared with conventional 3-D inductors. The simulation results revealed that more than -33 dB of isolation can be achieved at 2 GHz between the 3-D inductor and the noise probe.
引用
收藏
页码：308 / 318
页数：11
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