Exposure-Programmable CMOS Pixel With Selective Charge Storage and Code Memory for Computational Imaging

被引:14
作者
Luo, Yi [1 ]
Ho, Derek [2 ]
Mirabbasi, Shahriar [1 ]
机构
[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T TZ4, Canada
[2] City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong, Hong Kong, Peoples R China
基金
加拿大自然科学与工程研究理事会;
关键词
Computational imaging; coded exposure; capacitive transimpedance amplifier (CTIA); CMOS image sensor (CIS); SENSOR;
D O I
10.1109/TCSI.2017.2763822
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Computational imaging, as a rapid emerging field, enables unprecedented photographic capability through the encoding of visual information. Currently, as exposure programming is not support by image sensors, computational cameras use off-chip components to accomplish exposure/encoding optical computations. In this paper, we present a complementary metal-oxide-semiconductor (CMOS) pixel structure with exposure encoding capabilities that enable on-chip computational imaging. As a proof-of-concept, a 10 x 10-pixel prototype chip is fabricated in a 0.13-mu m 8-metal 1-poly CMOS process with shared pixel output wires and two 3.3-V power supplies. Each computational pixel is 12.1 mu m x 12.2 mu m with a fill factor of 33.2%. Measurement results confirm that at a frame rate of 60 f/s, the proposed pixel is capable of performing both temporal and spatial exposure encoding. The proposed pixel design paves a promising path to achieve on-chip temporal-spatial exposure encoding directly on the sensor focal plane for computational imaging.
引用
收藏
页码:1555 / 1566
页数:12
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