An extensive study of the influence of dopants on the ferroelectric properties of HfO2

被引：203

作者：

Starschich, S. ^{[1
]}

Boettger, U. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, D-52074 Aachen, Germany

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2017年 / 5卷 / 02期

关键词：

CRYSTALLIZATION; BEHAVIOR; HAFNIA; FILMS;

D O I：

10.1039/c6tc04807b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ferroelectric properties of hafnium oxide based thin films prepared by chemical solution deposition (CSD) are investigated. In this extensive study, a wealth of strongly different dopants (size and valence) and dopant concentrations is used to induce ferroelectricity in 42 nm thin films. Using the same precursors and preparation conditions for all dopants a good comparability is given. In particular, the dopant size appears to have a crucial impact on the resulting ferroelectric properties. For smaller dopants only a small ferroelectric response is observed whereas for larger dopants the remanent polarization is increased significantly. The crystal phase for varying dopant concentrations and dopant sizes is investigated by grazing incidence X-ray diffractions (GI-XRD). A dominating cubic phase is found for doping concentrations showing the highest remanent polarization. Similar to first CSD studies on Y: HfO2, this is reflected in a prominent wake-up behavior, which is attributed to a phase transition from cubic to orthorhombic during field cycling.

引用

页码：333 / 338

页数：6

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