Dual-band 1.7 GHz/2.5 GHz class-E power amplifier in 130 nm CMOS technology

被引：0
|
作者：
Kalim, Danish [1 ]
Fatemi, Adel [1 ]
Negra, Renato [1 ]
机构：
[1] Rhein Westfal TH Aachen, Mixed Signal CMOS Circuits, UMIC Res Ctr, D-52056 Aachen, Germany
来源：
2012 IEEE 10TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2012年
关键词：
Dual-band; class-E; multiharmonic load transformation network (MHLTN); switching-mode power amplifier (SMPA); output power; power added efficiency (PAE); MICROWAVE; DESIGN; RF;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The evolution of new mobile communication standards demand highly efficient multiband power amplifiers (PAs) both in mobile equipments and base stations. This paper presents a concept for a compact multiharmonic load transformation network (MHLTN), appropriate for a fully integrated differential dual-band PA design in an RF front-end transmitter. The proposed MHLTN was applied to implement a dual-band class-E PA based on finite DC-feed inductance in a 130nm CMOS process for GSM1700 and LTE2500 operation. With a dual-band input matching network, simulation results have shown peak power added efficiency (PAE) and peak output power of more than 57% and 27 dBm, respectively, at both bands. The designed PA is also able to cover a wide frequency range. From 1.4GHz to 2.7 GHz, output power is above 25dBm and PAE is higher than 50 %.
引用
收藏
页码：473 / 476
页数：4
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