Effect of B2O3 on the Sintering Condition and Microwave Dielectric Properties of Bi4(SiO4)3 Ceramics

被引：9

作者：

Joung, Mi-Ri ^{[1
]}

Kim, Jin-Seong ^{[1
]}

Song, Myung-Eun ^{[1
]}

Paik, Dong-Su ^{[1
]}

Nahm, Sahn ^{[1
]}

Paik, Jong-Hoo ^{[2
]}

Choi, Byung-Hyun ^{[2
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2008年 / 91卷 / 12期

关键词：

D O I：

10.1111/j.1551-2916.2008.02819.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

B2O3 was added to Bi-4(SiO4)(3) ceramics to aid the densification process at low temperatures (<= 900 degrees C). When the B2O3 content was < 3.0 mol%, a porous microstructure developed for the specimens sintered at 875 degrees C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi-4(SiO4)(3) ceramics were well sintered even at 875 degrees C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B2O3-added Bi-4(SiO4)(3) ceramic sintered at 875 degrees C for 1 h showed good microwave dielectric properties of epsilon(r)=15.6, Q x f=36 281 GHz, and tau(f)=-22 ppm/degrees C.

引用

页码：4165 / 4167

页数：3

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