Modeling of 2DEG and Surface Barrier Height in ZnO-Based Heterostructures Using Surface States

被引:0
|
作者
Ghosh, Joydeep [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Mumbai, Maharashtra, India
来源
2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2017年
关键词
2D electron gas; surface donor states; surface barrier height; ZnO-based heterostructures; 2-DIMENSIONAL ELECTRON-GAS; SPONTANEOUS POLARIZATION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is well known that a two-dimensional electron gas (2DEG) exists at the MgZnO/ZnO interface. Both the formation mechanism and the origin of this 2DEG is of immense interest. The origin has been attributed to the polarization charge present coupled with the donor-like surface states on the MgZnO surface. In this paper, a physics-based model is described to explain the 2DEG as well as the bare surface barrier height by considering the low density surface donor states distributed over a range of energies below a particular donor energy level. The model shows good agreement with the reported experimental results. The model for the 2DEG in a MgZnO/CdZnO heterostructure is also analyzed.
引用
收藏
页数:4
相关论文
共 50 条
  • [31] Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures
    Hasan, Md Tanvir
    Tokuda, Hirokuni
    Kuzuhara, Masaaki
    APPLIED PHYSICS LETTERS, 2011, 99 (13)
  • [32] Lateral Schottky Barrier Diodes Based on GaN/AlGaN 2DEG for sub-THz Detection
    Cywinski, Grzegorz
    Yahniuk, Ivan
    Szkudlarek, Krzesimir
    Kruszewski, Piotr
    Yatsunenko, Sergey
    Muziol, Grzegorz
    Skierbiszewski, Czeslaw
    But, Dmytro
    Knap, Wojciech
    PROCEEDINGS OF THE 23RD INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2016), 2016, : 346 - 349
  • [33] Tunable wettability in surface-modified ZnO-based hierarchical nanostructures
    Li, Gongping
    Chen, Tao
    Yan, Bin
    Ma, Yun
    Zhang, Zhou
    Yu, Ting
    Shen, Zexiang
    Chen, Hongyu
    Wu, Tom
    APPLIED PHYSICS LETTERS, 2008, 92 (17)
  • [34] BARRIER HEIGHT AND SURFACE-STATES AT CLEANED INSB(110) SURFACES
    KREUTZ, EW
    RICKUS, E
    SOTNIK, N
    THIN SOLID FILMS, 1983, 101 (02) : 153 - 165
  • [35] SURFACE-STATES AND BARRIER HEIGHT AT METAL-GAAS INTERFACE
    TYAGI, MS
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 333 - 336
  • [36] SURFACE ACOUSTIC-WAVE ATTENUATION BY LOCALIZED-ELECTRONS IN A 2DEG AT A GAAS/ALGAAS HETEROJUNCTION
    RAMPTON, VW
    MCENANEY, K
    KOZOREZOV, AG
    CARTER, PJA
    WILKINSON, CDW
    HENINI, M
    HUGHES, OH
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (05) : 641 - 647
  • [37] NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER.
    Hida, Hikaru
    Ohata, Keiichi
    Suzuki, Yasuyuki
    Toyoshima, Hideo
    IEEE Transactions on Electron Devices, 1986, ED-33 (05) : 601 - 607
  • [38] NONRECIPROCAL ACOUSTOELECTRIC INTERACTION OF SURFACE WAVES AND FLUORINE PLASMA-TREATED ALGAN/GAN 2DEG
    Ghosh, Siddhartha
    Hancock, Timothy
    Storey, Matthew
    Parameswaran, Lalitha
    Geis, Michael
    Ralston, Richard
    Weinstein, Dana
    2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2017, : 1939 - 1942
  • [39] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER - COMMENTS
    NGUYEN, LD
    TASKER, PJ
    SCHAFF, WJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1187 - 1187
  • [40] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER - REPLY
    HIDA, H
    OHATA, K
    SUZUKI, Y
    TOYOSHIMA, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1187 - 1188