Modeling of 2DEG and Surface Barrier Height in ZnO-Based Heterostructures Using Surface States

被引：0
|
作者：
Ghosh, Joydeep [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Mumbai, Maharashtra, India
来源：
2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2017年
关键词：
2D electron gas; surface donor states; surface barrier height; ZnO-based heterostructures; 2-DIMENSIONAL ELECTRON-GAS; SPONTANEOUS POLARIZATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is well known that a two-dimensional electron gas (2DEG) exists at the MgZnO/ZnO interface. Both the formation mechanism and the origin of this 2DEG is of immense interest. The origin has been attributed to the polarization charge present coupled with the donor-like surface states on the MgZnO surface. In this paper, a physics-based model is described to explain the 2DEG as well as the bare surface barrier height by considering the low density surface donor states distributed over a range of energies below a particular donor energy level. The model shows good agreement with the reported experimental results. The model for the 2DEG in a MgZnO/CdZnO heterostructure is also analyzed.
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页数：4
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