Magnetic and transport properties of La0.7Sr0.3Mn1-xTixO3 (0 ≤ x ≤ 0.5) films prepared by chemical solution deposition
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Zhu, XB
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Chinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
Zhu, XB
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Sun, YP
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Chinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
Sun, YP
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Ang, R
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Chinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
Ang, R
[1
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Zhao, BC
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Chinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
Zhao, BC
[1
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Song, WH
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Chinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
Song, WH
[1
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[1] Chinese Acad Sci, Key Lab Mat Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
La0.7Sr0.3Mn1-xTixO3 films (0 <= x <= 0.5) were fabricated using chemical solution deposition. It was found that with an increase in Ti content, the lattice constant was first increased due to the substitution of Mn4+ with Ti4+, and then it tended to decrease when x >= 0.3 due to the substitution of Mn3+ by Ti4+ with a larger ionic radius, as well as when excess oxygen was introduced. With the increase in x, the Curie temperature was decreased and broadened; however, it was found that all the films showed ferromagnetic properties at 300 K, which indicated that the excess oxygen played an important role. The transport properties showed that with an increase in Ti content the resistivity increased and the insulator-metal transition tended to a lower temperature due to the depression of the double exchange and the dilution of the Mn3+-O-Mn4+ network. Moreover, the temperature dependence of magnetoresistance (MR) results showed that with the Ti content increasing, the maximum MR increased and the transition was broadened suggesting that it is useful to tune the MR behaviour through Ti doping, and when x <= 0.1 the derived films showed no obvious MR at low temperature; however, when x = 0.3, the film did show obvious MR at low temperature.
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Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUSNatl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
Troyanchuk, I. O.
Bushinsky, M. V.
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Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUSNatl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
Bushinsky, M. V.
Tereshko, N. V.
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Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUSNatl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
Tereshko, N. V.
Sikolenko, V.
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Joint Inst Nucl Res, Dubna 141980, Moscow Oblast, RussiaNatl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
Sikolenko, V.
Schorr, S.
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Helmholtz Zentrum Berlin Mat & Energie, Berlin 14109, Germany
Free Univ Berlin, Berlin 14195, GermanyNatl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Jian, Hongbin
Zhang, Zhiqing
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Zhang, Zhiqing
Wang, Yujia
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Wang, Yujia
Tang, Xianwu
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Tang, Xianwu
Yang, Jie
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Yang, Jie
Hu, Ling
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Hu, Ling
Chen, Li
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Chen, Li
Zhu, Xuebin
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Zhu, Xuebin
Sun, Yuping
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
机构:
E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
Cao, Danyan
Zhang, Yuanyuan
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
Zhang, Yuanyuan
Yang, Jing
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
Yang, Jing
Bai, Wei
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
Bai, Wei
Chen, Ying
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
Chen, Ying
Wang, Genshui
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
Wang, Genshui
Dong, Xianlin
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
Dong, Xianlin
Tang, Xiaodong
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E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R ChinaE China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China