Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications

In this paper, we report the development and performance of a complete InP-based DHBT manufacturable technology from material growth to device and integrated circuits realizations. The InGaAs/InP DHBTs were grown in a multi-wafer solid phosphorus MBE system. High frequency devices with an effective emitter area of 4.8 mu m(2) exhibited peak f(T) and f(MAX) values of 250 and 270 GHz, respectively, at a collector current density of similar to 4 mA/mu m(2). Using this technology, distributed amplifiers and low power consumption selectors, have been successfully fabricated and tested above 80 Gbit/s. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.