Evidence of lateral coupling phenomenon in self-assembled InAs/InP(001) quantum dots characterized by Photoluminescence Spectroscopy (PLS)

被引：0
作者：
Besahraoui, F. [1 ]
Bouslama, M. [1 ]
Ghafour, M. [1 ]
Lounis, Z. [1 ]
Hamaida, K. [1 ]
机构：
[1] Ecole Natl Polytech Oran ONP Oran, Dept Phys Chem, Mat Lab LABMAT, Oran, Algeria
来源：
2014 NORTH AFRICAN WORKSHOP ON DIELECTRIC MATERIALS FOR PHOTOVOLTAIC SYSTEMS (NAWDMPV) | 2014年
关键词：
quantum dots; photoluminescence; lateral coupling; ground state; MU-M;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have characterized with photoluminescence spectroscopy (PLS) the optoelectronic properties of selfassembled InAs quantum islands (QIs) grown on InP(001) substrate. InAs/InP(001) QIs are grown by Molecular Beam Epitaxy (MBE) method in optimized conditions of temperature and gas pressure. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum islands have an isotropic quantum dots (QDs) shape. Through the excitation density PL measurements, we have checked the origin of the PL peaks. The observed PL peaks are related to a ground states of two families of InAs/InP(001) quantum dots. Through the study of the excitation density - PL spectra, we have evidenced the presence of a lateral coupling phenomenon between the two families of InAs/InP(001) quantum dots. In this case, the ground states are infected by this phenomenon which is considered, in this situation, a degradation source of the optoelectronic devices.
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页数：4
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