Fabrication of high-aspect ratio SU-8 micropillar arrays

被引:53
作者
Amato, Letizia [1 ]
Keller, Stephan S. [1 ]
Heiskanen, Arto [1 ]
Dimaki, Maria [1 ]
Emneus, Jenny [1 ]
Boisen, Anja [1 ]
Tenje, Maria [1 ]
机构
[1] Tech Univ Denmark, DTU Nanotech, Dept Nano & Microtechnol, DK-2800 Lyngby, Denmark
关键词
High-aspect ratio SU-8; Micropillars; UV photolithography; RESIST PATTERN COLLAPSE; PHOTORESIST; MICROSTRUCTURES; POLYMERIZATION;
D O I
10.1016/j.mee.2012.07.092
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
SU-8 is the preferred photoresist for development and fabrication of high aspect ratio (HAR) three dimensional patterns. However, processing of SU-8 is a challenging task, especially when the film thickness as well as the aspect ratio is increasing and the size of the features is close to the resolution limit of photolithography. This paper describes process optimization for the fabrication of dense SU-8 micropillar arrays (2.5 mu m spacing) with nominal height >= 20 mu m and nominal diameter <= 2.5 mu m (AR >= 8). Two approaches, differing in temperature, ramping rate and duration of the baking steps were compared as part of the photolithographic processing, in order to evaluate the effect of baking on the pattern resolution. Additionally, during the post-processing, supercritical point drying and hard baking were introduced yielding pillars with diameter 1.8 mu m, AR = 11 and an improved temporal stability. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:483 / 487
页数:5
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