Fabrication and Characteristics of High Mobility InSnZnO Thin Film Transistors

被引：10

作者：

Choi, Pyungho ^{[1
]}

Lee, Junki ^{[1
]}

Park, Hyoungsun ^{[1
]}

Baek, Dohyun ^{[1
]}

Lee, Jaehyeong ^{[1
]}

Yi, Junsin ^{[1
]}

Kim, Sangsoo ^{[1
]}

Choi, Byoungdeog ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, 2066 Seobu Ro, Suwon 440746, Gyeonggi Do, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 05期

关键词：

Oxide TFT; ITZO; Oxygen Partial Pressure; Gate Bias Instability; BIAS-STRESS;

D O I：

10.1166/jnn.2016.12214

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper, we describe the fabrication of thin film transistors (TFTs) with amorphous indium-tin-zinc-oxide (ITZO) as the active material. A transparent ITZO channel layer was formed under an optimized oxygen partial pressure (OPP (%) = O-2/(Ar + O-2)) and subsequent annealing process. The electrical properties exhibited by this device include field-effect mobility (mu(eff)), sub-threshold swing (SS), and on/off current ratio (I-ON/OFF) values of 28.97 cm(2)/V.s, 0.2 V/decade, and 2.64 x 10(7), respectively. The average transmittance values for each OPP condition in the visible range were greater than 80%. The positive gate bias stress resulted in a positive threshold voltage (V-th) shift in the transfer curves and degraded the parameters mu(eff) and SS. These phenomena originated from electron trapping from the ITZO channel layer into the oxide/ITZO interface trap sites.

引用

收藏

页码：4788 / 4791

页数：4

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