Femtosecond Laser Direct Writing with Gating Exposure

被引：0

作者：

Yu, Yan-Hao ^{[1
]}

Jiang, Jun ^{[1
]}

Chen, Qi-Dai ^{[1
]}

Sun, Hong-Bo ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China

来源：

2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed a gating exposure technique for femtosecond laser direct writing. The average laser power could be linearly controlled with the scanning speed while maintaining the exposure dose on the scanning path.

引用

页数：2

共 4 条

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