Characteristics analysis of AlGaAs/GaAs resonant tunneling diode (RTD) by device simulation

被引：0

作者：

Niu, PJ ^{[1
]}

Liu, HW ^{[1
]}

Guo, WL ^{[1
]}

Li, XY ^{[1
]}

机构：

[1] Tianjin Polytech Univ, Sch Informat & Commun Eng, Tianjin 300160, Peoples R China

来源：

Proceedings of the Third International Symposium on Magnetic Industry (ISMI'04) & First International Symposium on Physics and IT Industry (ISITI'04) | 2005年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The device simulation of AlGaAs/GaAs RTD is performed by ATLAS, SILVACO software, and RTD IN characteristics are obtained with different structure. The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in detail.

引用

页码：233 / 234

页数：2

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