Wide variations of SiCxNy:H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma

被引：22
作者：
Bulou, Simon [1 ,2 ]
Le Brizoual, Laurent [3 ]
Miska, Patrice [1 ,2 ]
de Poucques, Ludovic [1 ,2 ]
Bougdira, Jamal [1 ,2 ]
Belmahi, Mohammed [1 ,2 ]
机构：
[1] Univ Lorraine, Inst Jean Lamour, UMR 7198, Fac Sci & Technol, F-54506 Vandoeuvre Les Nancy, France
[2] CNRS, Inst Jean Lamour, UMR 7198, Fac Sci & Technol, F-54506 Vandoeuvre Les Nancy, France
[3] Univ Nantes, Inst Mat Jean Rouxel IMN, CNRS UMR 6502, F-44322 Nantes, France
来源：
SURFACE & COATINGS TECHNOLOGY | 2012年 / 208卷
关键词：
Microwave plasma induced chemical vapor deposition; SiCN thin films; Organosilicon compound; Chemical composition; Optical constants; CHEMICAL-VAPOR-DEPOSITION; SILICON CARBONITRIDE FILMS; C-N FILMS; AMORPHOUS-SILICON; NITROGEN PLASMA; H FILMS; (DIMETHYLAMINO)DIMETHYLSILANE PRECURSOR; TETRAMETHYLDISILAZANE SOURCE; SURFACE PASSIVATION; SI-N;
D O I：
10.1016/j.surfcoat.2012.07.079
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SiCxNy:H thin film growth has been achieved in N-2/H-2/Ar/hexamethyldisilazane microwave plasma induced chemical vapor deposition process. Depending on the N-2 and H-2 flow rates, film composition can be changed from "SiCx:H-like" to "SiNx:H-like". Therefore, refractive index (n) and Tauc's optical gap (Eg) are modified over a wide range of values (1.75 <= n <= 2.15 and 3.5 eV <= Eg <= 5 eV). In addition, n and Eg values are closely related to Si - C bonding density. N-2 addition to the plasma leads to the substitution of Si - C by Si - N bonds in the film and results in important composition and optical constants variations. This "silane free" process appears as an interesting plasma induced chemical vapor deposition process for silicon-based coating synthesis in the field of optical applications. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：46 / 50
页数：5
相关论文
共 36 条
[1]   Hard Si-N-C films with a tunable band gap produced by pulsed glow discharge deposition [J].
Afanasyev-Charkin, IV ;
Nastasi, M .
SURFACE & COATINGS TECHNOLOGY, 2005, 199 (01) :38-42
[2]   Structural and mechanical properties of amorphous silicon carbonitride films prepared by vapor-transport chemical vapor deposition [J].
Awad, Y. ;
El Khakani, M. A. ;
Aktik, C. ;
Mouine, J. ;
Camire, N. ;
Lessard, M. ;
Scarlete, M. ;
Al-Abadleh, H. A. ;
Smirani, R. .
SURFACE & COATINGS TECHNOLOGY, 2009, 204 (04) :539-545
[3]   Chemical characterization of SiCxNy nanolayers by FTIR-and Raman spectroscopy, XPS and TXRF-NEXAFS [J].
Baake, O. ;
Fainer, N. I. ;
Hoffmann, P. ;
Kosinova, M. L. ;
Rumyantsev, Yu. M. ;
Trunova, V. A. ;
Klein, A. ;
Ensinger, W. ;
Pollakowski, B. ;
Beckhoff, B. ;
Ulm, G. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 603 (1-2) :174-177
[4]   SYNTHESIS OF DIAMOND FROM METHANE AND NITROGEN MIXTURE [J].
BADZIAN, A ;
BADZIAN, T ;
LEE, ST .
APPLIED PHYSICS LETTERS, 1993, 62 (26) :3432-3434
[5]   Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Compositional and structural dependencies of film properties [J].
Blaszczyk-Lezak, I. ;
Wrobel, A. M. ;
Bielinski, D. M. .
DIAMOND AND RELATED MATERIALS, 2006, 15 (10) :1650-1658
[6]   Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Characterization of the process, chemical structure, and surface morphology of the films [J].
Blaszczyk-Lezak, I. ;
Wrobel, A. M. ;
Kivitorma, M. P. M. ;
Vayrynen, I. J. ;
Aoki, T. .
DIAMOND AND RELATED MATERIALS, 2006, 15 (09) :1484-1491
[7]   Structural and optical properties of a-SiCN thin film synthesised in a microwave plasma at constant temperature and different flow of CH4 added to HMDSN/N2/Ar mixture [J].
Bulou, S. ;
Le Brizoual, L. ;
Miska, P. ;
de Poucques, L. ;
Hugon, R. ;
Belmahi, M. ;
Bougdira, J. .
SURFACE & COATINGS TECHNOLOGY, 2011, 205 :S214-S217
[8]   a-SiCxNy thin films deposited by a microwave plasma assisted CVD process using a CH4/N2/Ar/HMDSN mixture: methane rate effect [J].
Bulou, S. ;
Le Brizoual, L. ;
Miska, P. ;
de Poucques, L. ;
Hugon, R. ;
Belmahi, M. .
INNOVATIONS IN THIN FILM PROCESSING AND CHARACTERISATION (ITFPC 2009), 2010, 12
[9]   The influence of CH4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH4/N2/Ar/hexamethyldisilazane microwave plasma [J].
Bulou, Simon ;
Le Brizoual, Laurent ;
Miska, Patrice ;
de Poucques, Ludovic ;
Hugon, Robert ;
Belmahi, Mohammed ;
Bougdira, Jamal .
THIN SOLID FILMS, 2011, 520 (01) :245-250
[10]   Characterization of a N2/CH4 Microwave Plasma With a Solid Additive Si Source Used for SiCN Deposition [J].
Bulou, Simon ;
Le Brizoual, Laurent ;
Hugon, Robert ;
De Poucques, Ludovic ;
Belmahi, Mohammed ;
Migeon, Henri-Noel ;
Bougdira, Jamal .
PLASMA PROCESSES AND POLYMERS, 2009, 6 :S576-S581
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