Wide variations of SiCxNy:H thin films optical constants deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma

被引：22
作者：
Bulou, Simon [1 ,2 ]
Le Brizoual, Laurent [3 ]
Miska, Patrice [1 ,2 ]
de Poucques, Ludovic [1 ,2 ]
Bougdira, Jamal [1 ,2 ]
Belmahi, Mohammed [1 ,2 ]
机构：
[1] Univ Lorraine, Inst Jean Lamour, UMR 7198, Fac Sci & Technol, F-54506 Vandoeuvre Les Nancy, France
[2] CNRS, Inst Jean Lamour, UMR 7198, Fac Sci & Technol, F-54506 Vandoeuvre Les Nancy, France
[3] Univ Nantes, Inst Mat Jean Rouxel IMN, CNRS UMR 6502, F-44322 Nantes, France
来源：
SURFACE & COATINGS TECHNOLOGY | 2012年 / 208卷
关键词：
Microwave plasma induced chemical vapor deposition; SiCN thin films; Organosilicon compound; Chemical composition; Optical constants; CHEMICAL-VAPOR-DEPOSITION; SILICON CARBONITRIDE FILMS; C-N FILMS; AMORPHOUS-SILICON; NITROGEN PLASMA; H FILMS; (DIMETHYLAMINO)DIMETHYLSILANE PRECURSOR; TETRAMETHYLDISILAZANE SOURCE; SURFACE PASSIVATION; SI-N;
D O I：
10.1016/j.surfcoat.2012.07.079
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SiCxNy:H thin film growth has been achieved in N-2/H-2/Ar/hexamethyldisilazane microwave plasma induced chemical vapor deposition process. Depending on the N-2 and H-2 flow rates, film composition can be changed from "SiCx:H-like" to "SiNx:H-like". Therefore, refractive index (n) and Tauc's optical gap (Eg) are modified over a wide range of values (1.75 <= n <= 2.15 and 3.5 eV <= Eg <= 5 eV). In addition, n and Eg values are closely related to Si - C bonding density. N-2 addition to the plasma leads to the substitution of Si - C by Si - N bonds in the film and results in important composition and optical constants variations. This "silane free" process appears as an interesting plasma induced chemical vapor deposition process for silicon-based coating synthesis in the field of optical applications. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：46 / 50
页数：5
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