Comparison of X-band MESFET and HBT class-E power amplifiers for EER transmitters

被引：2
|
作者：
Pajic, S [1 ]
Wang, N [1 ]
Popovic, Z [1 ]
机构：
[1] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA
来源：
2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年
关键词：
MESFET power amplifiers; microwave power bipolar transistor amplifiers; microwave power amplifiers; microwave devices;
D O I：
10.1109/MWSYM.2005.1517144
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a comparison of hybrid microwave class-E power amplifiers (PAs) using two types of active devices: GaAs MESFET and InP DHBT. The active devices have comparable periphery, are capable of delivering 20-21 dBm of output power at 10 GHz, with drain (collector) efficiencies in the range of 65%. Both PAs are characterized for envelope elimination and restoration technique (EER). Power, gain and efficiency sweeps, AM-AM and AM-PM characteristics, frequency sweeps and drain (collector) bias modulation properties are presented for the MESFET and HBT class-E PA.
引用
收藏
页码：2031 / 2034
页数：4
相关论文
共 50 条
  • [1] Linearity of X-band class-E power amplifiers in EER operation
    Wang, N
    Peng, XL
    Yousefzadeh, V
    Maksimovic, D
    Pajic, S
    Popovic, Z
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (03) : 1096 - 1102
  • [2] Linearity of X-band class-E power amplifiers in a digital polar transmitter
    Wang, Narisi
    Lopez, Nestor D.
    Yousefzadeh, Vahid
    Hoversten, John
    Maksimovic, Dragan
    Popovic, Zoya
    2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 1081 - 1084
  • [3] Comparison of two class-e amplifiers for EER transmitter
    Heiskanen, A. (antti.heiskanen@ee.oulu.fi), Circuits and Systems Society, IEEE CASS; Science Council of Japan; The Inst. of Electronics, Inf. and Communication Engineers, IEICE; The Institute of Electrical and Electronics Engineers, Inc., IEEE (Institute of Electrical and Electronics Engineers Inc.):
  • [4] Comparison of two class-E amplifiers for EER transmitter
    Heiskanen, A
    Rahkonen, T
    2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, : 704 - 707
  • [5] A monolithic X-band class-E power amplifier
    Tayrani, R
    GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001, 2001, : 205 - 208
  • [6] Intermodulation products in the EER technique applied to Class-E amplifiers
    Milosevic, D
    van der Tang, J
    van Roermund, A
    2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 1, PROCEEDINGS, 2004, : 637 - 640
  • [7] Linearity of X-band class-F power amplifiers in high-efficiency transmitters
    Weiss, MD
    Raab, FH
    Popovic, Z
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (06) : 1174 - 1179
  • [8] An indium phosphide X-band Class-E power MMIC with 40% bandwidth
    Watson, P
    Quach, T
    Axtel, H
    Gutierrez-Aitken, A
    Kaneshiro, E
    Lee, W
    Mattamana, A
    Oki, A
    Orlando, P
    Patel, V
    Sawdai, D
    2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 220 - 223
  • [9] Simplified Analysis and Design of Outphasing Transmitters Using Class-E Power Amplifiers
    Beltran, Ramon A.
    Raab, Frederick H.
    2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2015, : 16 - 18
  • [10] Performance Limits, Design and Implementation of mm-Wave SiGe HBT Class-E and Stacked Class-E Power Amplifiers
    Datta, Kunal
    Hashemi, Hossein
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (10) : 2150 - 2171
12345