Comparison of X-band MESFET and HBT class-E power amplifiers for EER transmitters

被引：2

作者：

Pajic, S ^{[1
]}

Wang, N ^{[1
]}

Popovic, Z ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

MESFET power amplifiers; microwave power bipolar transistor amplifiers; microwave power amplifiers; microwave devices;

D O I：

10.1109/MWSYM.2005.1517144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comparison of hybrid microwave class-E power amplifiers (PAs) using two types of active devices: GaAs MESFET and InP DHBT. The active devices have comparable periphery, are capable of delivering 20-21 dBm of output power at 10 GHz, with drain (collector) efficiencies in the range of 65%. Both PAs are characterized for envelope elimination and restoration technique (EER). Power, gain and efficiency sweeps, AM-AM and AM-PM characteristics, frequency sweeps and drain (collector) bias modulation properties are presented for the MESFET and HBT class-E PA.

引用

页码：2031 / 2034

页数：4

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