A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

被引：45

作者：

Kamyczek, P. ^{[1
]}

Placzek-Popko, E. ^{[1
]}

Kolkovsky, Vl ^{[2
]}

Grzanka, S. ^{[3
,4
]}

Czernecki, R. ^{[3
,4
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Tech Univ Dresden, D-01062 Dresden, Germany

[3] TopGaN Ltd, PL-01142 Warsaw, Poland

[4] Polish Acad Sci, Inst High Pressure Phys UNIPRESS, PL-01142 Warsaw, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 11期

关键词：

LEVEL TRANSIENT SPECTROSCOPY; TRAPS; EPITAXY; FILMS;

D O I：

10.1063/1.4725484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present study, the electrical and optical properties of deep defects in p-i-n GaN junction and AlGaN/GaN heterojunction are investigated by means of the deep level transient spectroscopy (DLTS), Laplace DLTS, and electroluminescence (EL) techniques. We demonstrate that in both structures the yellow luminescence (YL) is a dominant band in the EL spectra recorded at room temperature. We correlate the YL band with the minority DLTS peaks observed at about 370 K. A gallium vacancy-related defect seems to be a probable candidate as to the origin of the defect. Another dominant majority peak observed in the DLTS studies was concluded to be linked with a donor-like defect in the upper half of the bandgap. The origin of the defect is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4725484]

引用

页数：7

共 30 条

[1] Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes [J].

Arehart, A. R. ;

Allerman, A. A. ;

Ringel, S. A. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (11)

[2] Processing-induced electron traps in n-type GaN [J].

Auret, FD ;

Goodman, SA ;

Myburg, G ;

Mohney, SE ;

de Lucca, JM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3) :102-104

[3]

Blood P, 1992, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Techniques of Physics)

[4] Optical constants of epitaxial AlGaN films and their temperature dependence [J].

Brunner, D ;

Angerer, H ;

Bustarret, E ;

Freudenberg, F ;

Hopler, R ;

Dimitrov, R ;

Ambacher, O ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5090-5096

[5] Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers [J].

Eckey, L ;

von Gfug, U ;

Holst, J ;

Hoffmann, A ;

Kaschner, A ;

Siegle, H ;

Thomsen, C ;

Schineller, B ;

Heime, K ;

Heuken, M ;

Schon, O ;

Beccard, R .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) :5828-5830

[6] Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy [J].

Fang, ZQ ;

Look, DC ;

Kim, DH ;

Adesida, I .

APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3

[7] Deep centers in a free-standing GaN layer [J].

Fang, ZQ ;

Look, DC ;

Visconti, P ;

Wang, DF ;

Lu, CZ ;

Yun, F ;

Morkoç, H ;

Park, SS ;

Lee, KY .

APPLIED PHYSICS LETTERS, 2001, 78 (15) :2178-2180

[8]

GOTZ W, 1994, APPL PHYS LETT, V65, P463, DOI 10.1063/1.112337

[9]

Gotz W, 1996, APPL PHYS LETT, V68, P3470, DOI 10.1063/1.116075

[10] A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies [J].

Gotz, W ;

Johnson, NM ;

Bremser, MD ;

Davis, RF .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2379-2381

← 1 2 3 →