Spectrally-resolved dynamics of two-state lasing in quantum-dot lasers

被引：2

作者：

Mao, MH ^{[1
]}

Su, LC ^{[1
]}

Wang, KC ^{[1
]}

Liu, WS ^{[1
]}

Chiu, PC ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 106, Taiwan

来源：

2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) | 2005年

关键词：

D O I：

10.1109/LEOS.2005.1547867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spectrally-resolved dynamics of two-state lasing in quantum-dot lasers is experimentally demonstrated for the first time in this study. The onset of excited-state lasing prior to ground-state lasing is consistent with our theoretical prediction.

引用

页码：39 / 40

页数：2

共 5 条

[1]

BIMBERG D, 1999, QUANTUM DOT HEREROST

[2] Simultaneous two-state lasing in quantum-dot lasers [J].

Markus, A ;

Chen, JX ;

Paranthoën, C ;

Fiore, A ;

Platz, C ;

Gauthier-Lafaye, O .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1818-1820

[3] Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation [J].

Maximov, MV ;

Asryan, LV ;

Shernyakov, YM ;

Tsatsul'nikov, AF ;

Kaiander, IN ;

Nikolaev, VV ;

Kovsh, AR ;

Mikhrin, SS ;

Ustinov, VM ;

Zhukov, AE ;

Alferov, ZI ;

Ledenstov, NN ;

Bimberg, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (05) :676-683

[4] Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs/GaAs quantum-dot lasers:: Homogeneous broadening of optical gain under current injection -: art. no. 043523 [J].

Sugawara, M ;

Hatori, N ;

Ebe, H ;

Ishida, M ;

Arakawa, Y ;

Akiyama, T ;

Otsubo, K ;

Nakata, Y .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)

[5] Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s-1 and a new scheme of 3R regenerators [J].

Sugawara, M ;

Akiyama, T ;

Hatori, N ;

Nakata, Y ;

Ebe, H ;

Ishikawa, H .

MEASUREMENT SCIENCE AND TECHNOLOGY, 2002, 13 (11) :1683-1691

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