Germanium fin light-emitting diode

被引：24

作者：

Saito, S. ^{[1
,2
,3
]}

Oda, K. ^{[1
,2
,3
]}

Takahama, T. ^{[3
]}

Tani, K. ^{[1
,2
,3
]}

Mine, T. ^{[3
]}

机构：

[1] Photon Elect Technol Res Assoc PETRA, Tokyo 1858601, Japan

[2] Inst Photon Elect Convergence Syst Technol PECST, Tokyo 1858601, Japan

[3] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 24期

关键词：

STRAINED-LAYER HETEROSTRUCTURES; OPTICAL GAIN; SILICON; WIRE;

D O I：

10.1063/1.3670053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a germanium fin light-emitting diode for a monolithic light source on a Si photonics chip. The germanium fins were fabricated by the oxidation condensation of silicon-germanium sidewalls epitaxially grown on silicon fins. We found that a tensile stress is applied to the pure germanium fins by the difference of the thermal expansion coefficient with that of the surrounding oxide. The electroluminescence spectra were consistent with those expected from direct recombination in germanium with a tensile stress. The strong immunity of germanium fins against high current densities would be favourable to achieve population inversions by electrical pumping. (C) 2011 American Institute of Physics. [doi:10.1063/1.3670053]

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