The nature of arsenic incorporation in GaN

被引：7

作者：

Bell, A ^{[1
]}

Ponce, FA

Novikov, SV

Foxon, CT

Harrison, I

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[3] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 20期

关键词：

D O I：

10.1063/1.1418030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4x10(17) to 4.2x10(18) cm(-3). Secondary ion mass spectroscopy data show that increasing the As concentration has the effect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration. (C) 2001 American Institute of Physics.

引用

页码：3239 / 3241

页数：3

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