A dual wideband CMOS LNA design for the 4G of wireless applications

被引：0
|
作者：
Ben Amor, M. [1 ]
Loulou, M. [1 ]
Quintanel, S. [2 ]
Pasquet, D. [2 ]
机构：
[1] Natl Engn Sch Sfax, Dept Elect Engn, LETI, Res Grp Elect & Commun EleCom, Sfax, Tunisia
[2] ENSEA UCP, ECIME, Cergy, France
来源：
2008 INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE | 2008年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A dual wide band low noise amplifier for WiMAX (802.16a) standard is presented. The circuit is designed with AMS 0.35 mu m CMOS process. This LNA is designed to cover the two frequency ranges for licensed and unlicensed bands of the WiMAX 2-4GHz and 5-6GHz. The proposed amplifier achieves a wide band input matching with S-11 lower than -10dB for all the band 2-6GHz, a flat gain for the two bands; 13db between 2-4GHz and 10dB between 5-6GHz. The noise figure is around 3dB for all the band and 2-6GHz. The presented dual wide band LNA employs a Chebychev filter for input matching and an inductive shunt feedback for output matching. The power consumption is 62.5mW under a power supply voltage of 2.5V.
引用
收藏
页码：329 / +
页数：2
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