Preparation and luminescence characterization of GGAG:Ce3+,B3+ for a white light-emitting diode

被引：19
|
作者：
Kang, Jun-Gill [1 ]
Kim, Myung-Kyo [2 ]
Kim, Kwang-Bok [3 ]
机构：
[1] Chungnam Natl Univ, Dept Chem, Taejon 305764, South Korea
[2] Alti Elect Co Ltd, Gyeonggi Do 449882, South Korea
[3] Kumho Elect Inc, Gyeonggi Do 449883, South Korea
来源：
MATERIALS RESEARCH BULLETIN | 2008年 / 43卷 / 8-9期
关键词：
inorganic compounds; oxide; luminescence; X-ray diffraction; optical properties;
D O I：
10.1016/j.materresbull.2007.10.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We prepared Gd3Ga2Al3O12 (GGAG) co-doped with trivalent cerium and boron ions and investigated its luminescence properties as a: function of the B3+ concentration. The luminescence intensity was enhanced markedly by adding B3+ as a co-dopant. The non-boron-doped GGAG:Ce3+ converted less than 10% of the absorbed blue light into luminescence. As the B3+ concentration increased, Q increased and reached a maximum of Q = 21% at 1.5 moles in GGAG:Ce3+. White light closer to daylight with good color-rendering index properties was generated with the proper combination of yellow emission from GGAG:Ce3+,B3+ and blue emission from a GaN chip. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1982 / 1988
页数：7
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