Fabrication and characterization of short period AIN/GaN quantum cascade laser structures

被引：14

作者：

Inoue, Y

Nagasawa, H

Sone, N

Ishino, K

Ishida, A

Fujiyasu, H

Kim, JJ

Makino, H

Yao, T

Sakakibara, S

Kuwabara, M

机构：

[1] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Yamaha Corp, Toyooka, Shizuoka 4380192, Japan

[4] Hamamatsu Photon KK, Cent Res Lab, Hamakita 4348601, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 265卷 / 1-2期

关键词：

intersubband transition; superlattice; GaN; quantum cascade layer;

D O I：

10.1016/j.jcrysgro.2004.01.044

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Short period AlN/GaN quantum cascade (QC) laser structures that utilize 1 polarization field for electron injection were fabricated by hot wall epitaxy. A (GaN)(n)/(AlN), short period superlattice with several molecular layers of AlN was designed in order to realize a mid-infrared laser. The QC structures were analyzed by X-ray diffraction (XRD) measurements, atomic force microscopy and cross-sectional transmission electron microscopy observation. The XRD patterns and cross-sectional TEM images showed that a well-controlled quantum cascade structure could be prepared by hot wall epitaxy without inter-diffusion of the layers. (C) 2004 Elsevier B.V. All rights reserved.

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页码：65 / 70

页数：6

相关论文

共 21 条

[1] Room-temperature emission of GaAs/AlGaAs superlattice quantum-cascade lasers at 12.6 μm [J].

Anders, S ;

Schrenk, W ;

Gornik, E ;

Strasser, G .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :1864-1866

[2] Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J].

Beck, M ;

Hofstetter, D ;

Aellen, T ;

Faist, J ;

Oesterle, U ;

Ilegems, M ;

Gini, E ;

Melchior, H .

SCIENCE, 2002, 295 (5553) :301-305

[3] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[4] Distributed feedback quantum cascade lasers [J].

Faist, J ;

Gmachl, C ;

Capasso, F ;

Sirtori, C ;

Sivco, DL ;

Baillargeon, JN ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2670-2672

[5] Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers [J].

Gmachl, C ;

Ng, HM ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3722-3724

[6] Intersubband absorption in degenerately doped GaN/AlxGa1-xN coupled double quantum wells [J].

Gmachl, C ;

Ng, HM ;

Cho, AY .

APPLIED PHYSICS LETTERS, 2001, 79 (11) :1590-1592

[7] Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy [J].

Iizuka, N ;

Kaneko, K ;

Suzuki, N .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1803-1805

[8] AlN/GaN near-infrared quantum-cascade structures with resonant-tunneling injectors utilizing polarization fields [J].

Ishida, A ;

Inoue, Y ;

Kuwabara, M ;

Kan, H ;

Fujiyasu, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (11B) :L1303-L1305

[9] Quantum-cascade structure in AlN/GaN system assisted by piezo-electric effect [J].

Ishida, A ;

Ose, T ;

Nagasawa, H ;

Ishino, K ;

Inoue, Y ;

Fujiyasu, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (3A) :L236-L238

[10] GROWTH OF GAN FILMS BY HOT-WALL EPITAXY [J].

ISHIDA, A ;

YAMAMOTO, E ;

ISHINO, K ;

ITO, K ;

FUJIYASU, H ;

NAKANISHI, Y .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :665-666