Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

被引：33

作者：

Chiu, Shao-Pin ^{[1
]}

Chung, Hui-Fang ^{[2
]}

Lin, Yong-Han ^{[3
]}

Kai, Ji-Jung ^{[2
]}

Chen, Fu-Rong ^{[2
]}

Lin, Juhn-Jong ^{[1
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 30010, Taiwan

[2] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 10期

关键词：

SN-DOPED IN2O3; WEAK-LOCALIZATION; FILMS; SUPERCONDUCTIVITY; RESISTIVITY; ALLOYS;

D O I：

10.1088/0957-4484/20/10/105203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few mu m long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Gruneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

引用

页数：7

共 37 条

[1] EXACT CONFORMAL-FIELD-THEORY RESULTS ON THE MULTICHANNEL KONDO EFFECT - SINGLE-FERMION GREEN-FUNCTION, SELF-ENERGY, AND RESISTIVITY [J].