共 19 条
- [2] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1990, 41 (09): : 5701 - 5706
- [4] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1378 - 1381
- [7] Simulation and observation of the step bunching process grown on GaAs(001) vicinal surface by metalorganic vapor phase epitaxy [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1280 - 1284
- [8] MECHANISM OF MULTIATOMIC STEP FORMATION DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON (001) VICINAL SURFACE STUDIED BY ATOMIC-FORCE MICROSCOPY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B): : 721 - 726
- [9] MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A): : L864 - L866
- [10] SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS STEP STRUCTURES ON VICINAL SUBSTRATE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B): : 712 - 715