Ultra high vacuum scanning tunneling microscope observation of vicinal (001) GaAs surface and (117)B GaAs surface grown by metalorganic vapor phase epitaxy

被引:5
作者
Ishizaki, JY
Ishikawa, Y
Ohkuri, K
Kawase, M
Fukui, T
机构
[1] Res. Ctr. Interface Quant. E., Hokkaido University
关键词
step bunching; GaAs; MOVPE; UHV-STM; vicinal surface; surface reconstruction; multilayer step;
D O I
10.1016/S0169-4332(96)00868-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have observed the atomic arrangement on vicinal (001) GaAs surfaces and (117)B GaAs surface grown by metalorganic vapor phase epitaxy using an ultra high vacuum scanning tunneling microscope without exposure to air. Multilayer step regions and atomically flat terrace regions an alternately observed to the misorientation direction for both (001) GaAs surfaces misoriented by 2 degrees toward [110] direction (called A-surface) and [(1) over bar 10] direction (called B-surface). At the terrace region, c(4 x 4) reconstruction units are dominant. For B-surface, (4 x 2) and (4 x 3) like reconstruction units were observed between each monolayer step at multilayer step region, which correspond to (119)B GaAs surface. For A-surface, the reconstruction units are not clear at multilayer step region, but step-step separation is about 1.4 nm, which is close to (117)A GaAs surface. For(117)B GaAs surface, a lot of monolayer steps and (4 x 3) and (5 x 3) like reconstruction units were observed with significant undulations for whole area, which suggests that (117)B GaAs surface grown by MOVPE is thermodynamically unstable.
引用
收藏
页码:343 / 348
页数:6
相关论文
共 19 条
  • [1] THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES
    AVERY, AR
    HOLMES, DM
    SUDIJONO, J
    JONES, TS
    JOYCE, BA
    [J]. SURFACE SCIENCE, 1995, 323 (1-2) : 91 - 101
  • [2] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
    BIEGELSEN, DK
    BRINGANS, RD
    NORTHRUP, JE
    SWARTZ, LE
    [J]. PHYSICAL REVIEW B, 1990, 41 (09): : 5701 - 5706
  • [3] (ALAS)0.5(GAAS)0.5 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    FUKUI, T
    SAITO, H
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 824 - 826
  • [4] MOLECULAR-BEAM EPITAXY GROWTH OF TILTED GAAS ALAS SUPERLATTICES BY DEPOSITION OF FRACTIONAL MONOLAYERS ON VICINAL (001) SUBSTRATES
    GAINES, JM
    PETROFF, PM
    KROEMER, H
    SIMES, RJ
    GEELS, RS
    ENGLISH, JH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1378 - 1381
  • [5] FORMATION AND PHOTOLUMINESCENCE CHARACTERIZATION OF QUANTUM-WELL WIRES USING MULTIATOMIC STEPS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    HARA, S
    ISHIZAKI, J
    MOTOHISA, J
    FUKUI, T
    HASEGAWA, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 692 - 697
  • [6] OBSERVATION OF STEP BUNCHING ON VICINAL GAAS(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY
    HATA, K
    KAWAZU, A
    OKANO, T
    UEDA, T
    AKIYAMA, M
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (12) : 1625 - 1627
  • [7] Simulation and observation of the step bunching process grown on GaAs(001) vicinal surface by metalorganic vapor phase epitaxy
    Ishizaki, J
    Ohkuri, K
    Fukui, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1280 - 1284
  • [8] MECHANISM OF MULTIATOMIC STEP FORMATION DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON (001) VICINAL SURFACE STUDIED BY ATOMIC-FORCE MICROSCOPY
    ISHIZAKI, JY
    GOTO, S
    KISHIDA, M
    FUKUI, T
    HASEGAWA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B): : 721 - 726
  • [9] MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY
    KASU, M
    FUKUI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A): : L864 - L866
  • [10] SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS STEP STRUCTURES ON VICINAL SUBSTRATE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    KASU, M
    KOBAYASHI, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B): : 712 - 715