Thermal Rectification Enabled by Near-Field Radiative Heat Transfer Between Intrinsic Silicon and a Dissimilar Material

被引:110
作者
Wang, L. P. [1 ]
Zhang, Z. M. [2 ]
机构
[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
[2] Georgia Inst Technol, GW Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
near-field radiation; thermal rectification; thermal management;
D O I
10.1080/15567265.2013.776154
中图分类号
O414.1 [热力学];
学科分类号
摘要
Thermal rectification has recently attracted great attention because it could allow heat to flow in a preferred direction and may have promising applications in thermal management and energy systems. In addition to phonon engineering, photon transport at the near-field regime has been recently proposed to realize thermal rectification between planar structures. In the present study, the thermal rectification effect enabled by near-field thermal radiation between intrinsic silicon and other materials was investigated at various temperatures and vacuum gap distances. Strong thermal rectification between intrinsic Si and doped Si (rectification R=2.7) and between intrinsic Si and SiO2 (R=9.9) can be achieved with a 5 nm vacuum gap at temperatures of 1000 and 300 K. Rectification larger than one can be obtained in sub-10 nm vacuum gaps for the former configuration and sub-20 nm gaps for the latter configuration. A thermal rectifier made of gold and intrinsic Si is shown to have a rectification factor around 0.85 with temperatures of 600 and 300 K at a wide range of vacuum gaps from 100 to 500 nm. The physical mechanisms of the rectification effect in the three configurations are elucidated, and each of the proposed thermal rectifiers may have its own advantage for applications dealing with different temperatures and vacuum distances.
引用
收藏
页码:337 / 348
页数:12
相关论文
共 31 条
[1]  
[Anonymous], J HEAT TRANSFER
[2]   Review of near-field thermal radiation and its application to energy conversion [J].
Basu, S. ;
Zhang, Z. M. ;
Fu, C. J. .
INTERNATIONAL JOURNAL OF ENERGY RESEARCH, 2009, 33 (13) :1203-1232
[3]  
Basu S., 2009, JOURNAL OF APPLIED PHYSICS, V105
[4]   Near-field radiative transfer based thermal rectification using doped silicon [J].
Basu, Soumyadipta ;
Francoeur, Mathieu .
APPLIED PHYSICS LETTERS, 2011, 98 (11)
[5]   Solid-state thermal rectifier [J].
Chang, C. W. ;
Okawa, D. ;
Majumdar, A. ;
Zettl, A. .
SCIENCE, 2006, 314 (5802) :1121-1124
[6]   Solid-State Thermal Rectification With Existing Bulk Materials [J].
Dames, C. .
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2009, 131 (06) :1-7
[7]   Nanoscale radiation heat transfer for silicon at different doping levels [J].
Fu, CJ ;
Zhang, ZM .
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2006, 49 (9-10) :1703-1718
[8]   Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: A Molecular Dynamics Study [J].
Hu, Jiuning ;
Ruan, Xiulin ;
Chen, Yong P. .
NANO LETTERS, 2009, 9 (07) :2730-2735
[9]   Thermal rectification at water/functionalized silica interfaces [J].
Hu, Ming ;
Goicochea, Javier V. ;
Michel, Bruno ;
Poulikakos, Dimos .
APPLIED PHYSICS LETTERS, 2009, 95 (15)
[10]   Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide plates [J].
Iizuka, Hideo ;
Fan, Shanhui .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (02)